Samsung Electronics' next-generation AI memory technology drew strong interest and praise from global visitors at FMS (Future of Memory and Storage) 2026, one of the world's premier memory technology conferences.
Samsung Electronics said Friday that about 2,000 visitors came to its exhibition booth over three days at FMS 2026, held at the Santa Clara Convention Center in California from Tuesday through Thursday (local time).
Samsung set up a roughly 66-square-meter exhibition space at the venue, operating a booth designed to evoke an AI cloud server. The space was divided into three zones: a highlight zone, a cloud AI zone and an edge AI zone.
The booth featured about 30 memory chip products spanning DRAM, NAND flash and storage. Samsung Electronics showcased core memory technologies and customized solutions applicable across AI systems, from data centers to edge devices.
Visitor attention centered on zHBM and zNAND-O, which Samsung Electronics unveiled at the event as industry firsts. The company said the new memory technologies are designed to boost performance and power efficiency in next-generation AI systems.
zHBM departs from the conventional approach of connecting HBM beside an AI accelerator (xPU), instead stacking HBM directly on top of the accelerator — moving from a two-dimensional X-Y plane to a three-dimensional Z-axis arrangement, which is reflected in the "z" prefix. zNAND-O applies a three-dimensional vertical stacking method to NAND flash, delivering enhanced performance and power efficiency.
An interactive "AI Photo Event" also proved popular. The program used AI to generate an image of each visitor, composited against the Golden Gate Bridge — a symbol of San Francisco — and printed it on the spot as a commemorative lanyard badge.
One visitor said, "At this FMS, I became truly convinced that Samsung is back," adding that Samsung's technology was highly impressive and that its forward-looking vision stood out.
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